Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
| Line 5: | Line 5: | ||
==C4F8== | ==C4F8== | ||
I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong| here]] | I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong| here]] | ||
{| border="1" cellspacing="1" cellpadding="1" align="left" | |||
! Parameter | |||
! '''Mask material''' | |||
! '''Barc etch''' | |||
! '''Coil power''' | |||
! '''Platen power''' | |||
! '''Pressure''' | |||
! '''Flow rate C4F8''' | |||
! '''Flow rate H2''' | |||
! '''Flow rate Ar''' | |||
! width="20"| '''T''' | |||
! '''Process time''' | |||
! '''Comment''' | |||
! width="205"|'''Results''' | |||
! '''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch | |||
! '''Profile angles''' | |||
! width="115"|'''Etch depth in SiO2''' | |||
! width="150"|'''Etch rate''' | |||
! '''Etch depth in resist''' | |||
! '''Selectivity (resist:SiO2)''' | |||
! '''Etch rate in Si''' | |||
|- | |||
|-style="background:white; color:black" | |||
|s008684 | |||
|<!-- '''Mask material''' --> 880nm KRF | |||
|<!-- '''Barc etch''' --> barc etch CF 50s | |||
|<!-- '''Coil power''' --> 1000W | |||
|<!--'''Platen power'''--> 200W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 13sccm | |||
|<!--'''Flow rate H2'''--> 30sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 1:30min | |||
|<!--'''Comment'''--> The layer in this case is 300nm Si3N4 | |||
|<!--'''Results'''--> | |||
[[File:s008684_Si3N4_19.jpg|100px|frameless]] [[File:s008684_Si3N4_20.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
35% (1µm pitch)<br> | |||
47% (6µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
83-88 | |||
|<!--'''Etch depth in SiO2'''--> | |||
|<!--'''Etch rate'''--> | |||
>300nm/min (Si3N4) | |||
|<!--'''Etch depth in resist'''--> | |||
240nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
~1:2 (Si3N4) | |||
|<!--'''Etch rate in Si'''--> | |||
? | |||
|- | |||
==CF4== | ==CF4== | ||