Specific Process Knowledge/Bonding: Difference between revisions

Revision as of 13:50, 10 March 2008

.	Eutectic bonding	Fusion bonding	Anodic bonding
General description	For bonding two substrates by use of an interphase that makes an eutecticum.	For bonding two identical materials.	For bonding Si and Glass.
Bonding temperature	Depending on the eutecticum 310 $^{o}$ C to 400 $^{o}$ C.	Depending on defects 50 $^{o}$ C to 400 $^{o}$ C.	Depending on the voltage 300 $^{o}$ C to 500 $^{o}$ C Standard is 400 $^{o}$ C.
Annnealing temperature	No annealing	1000 $^{o}$ C in the bond furnace C3	No annealing
Materials possible to bond	Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Ni/Si	Si/Si, SiO $_{2}$ /SiO $_{2}$	Si/Pyrex (glass)
Substrate size	Up to 6"	Up to 6"	Up to 6"
Cleaning	Cleaning by N2.	Wet chemical cleaning, IMEC.	Cleaning by N2.

@@ Line 5: / Line 5: @@
 *Anodic bonding
-===Comparing the three bonding methods===
+===Comparing the three bonding methods in the EVG NIL===
 {| border="2" cellspacing="0" cellpadding="4" align="center"
 !.
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 |Up to 6"
 |-valign="top"
-|'''Resolution z'''
+|'''Cleaning'''
-|1Å or 25Å
+|Cleaning by N2.
-|1Å, 10Å or 20Å
+|Wet chemical cleaning, IMEC.
-|<1Å - accuracy better than 2%
+|Cleaning by N2.
-|- valign="top"
-|'''Max. scan depth [µm] (as a function of trench width W''')
-|0.87(W[µm]-5µm)
-|1.2(W[µm]-5µm)
-|~1 with standard cantilever.
-|-valign="top"
-|'''Tip radius'''
-|5 µm 60<sup>o</sup> cone
-|5 µm 45<sup>o</sup> cone
-|<12 nm on standard cantilever
-|-valign="top"
-|'''Stress measurement'''
-|Can be done
-|Can be done
-|Cannot be done
-|-valign="top"
-|'''Surface roughness'''
-|Can be done on a line scan
-|Can be done on a line scan
-|Can be done on a selected surface area
 |-
 |}