Specific Process Knowledge/Bonding: Difference between revisions

Revision as of 13:41, 10 March 2008

.	Eutectic bonding	Fusion bonding	Anodic bonding
General description	For bonding two substrates by use of an interphase that makes an eutecticum.	For bonding two identical materials.	For bonding Si and Glass.
Bonding temperature	Depending on the eutecticum 310 $^{o}$ C to 400 $^{o}$ C.	Depending on defects 50 $^{o}$ C to 400 $^{o}$ C.	Depending on the voltage 300 $^{o}$ C to 500 $^{o}$ C Standard is 400 $^{o}$ C.
Annnealing temperature	No annealing	1000 $^{o}$ C in the bond furnace C3	No annealing
Materials possible to bond	Bonding of primarely Si is done by use of the eutectica Au/Si, Au/Sn and Ni/Si	Si/Si, SiO $_{2}$ /SiO $_{2}$	Si/Pyrex (glass)
Substrate size	Up to 6"	Up to 6"	Up to 6"
Resolution z	1Å or 25Å	1Å, 10Å or 20Å	<1Å - accuracy better than 2%
Max. scan depth [µm] (as a function of trench width W)	0.87(W[µm]-5µm)	1.2(W[µm]-5µm)	~1 with standard cantilever.
Tip radius	5 µm 60^o cone	5 µm 45^o cone	<12 nm on standard cantilever
Stress measurement	Can be done	Can be done	Cannot be done
Surface roughness	Can be done on a line scan	Can be done on a line scan	Can be done on a selected surface area

@@ Line 13: / Line 13: @@
 |- valign="top"
 |'''General description'''
-|For bonding an interphase that makes an eutecticum eg. Au/Si (two different matarials).
+|For bonding two substrates by use of an interphase that makes an eutecticum.
-|For bonding two identical materials eg. Si/Si.
+|For bonding two identical materials.
 |For bonding Si and Glass.
 |-valign="top"
@@ Line 28: / Line 28: @@
 |-valign="top"
 |'''Materials possible to bond'''
-|Au/Si , Au/Sn, Ni/Si
+|Bonding of primarely Si is done by use of the eutectica Au/Si, Au/Sn and Ni/Si
 |Si/Si, SiO<math>_2</math>/SiO<math>_2</math>
 |Si/Pyrex (glass)