Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
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== Development of continuous nanoetch == | == Development of continuous nanoetch == | ||
The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. | The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% )of silicon to be etched. | ||
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