Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions

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image:Al2O3_LT_RI.JPG| Measured refractive index distribution across 100 mm wafer.
image:Al2O3_LT_RI.JPG| Measured refractive index distribution across 100 mm wafer.
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<b>Evgeniy Shkondin, DTU Danchip, 2014-2016.</b>
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==Low temperature deposition of TiO<sub>2</sub>==
==Low temperature deposition of TiO<sub>2</sub>==

Revision as of 17:06, 19 May 2016

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al2O3

Recipe: Al2O3 LT

Temperature: 80-150 oC

TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.2 s
Purge time 5.0 s 10.0 s

Deposition rate: 0.089 nm/cycle (@120 oC)

This recipe has been developd for fabrication of high quality homogenious optical layers at low temperature.


Al2O3 deposition at 120 oC


Deposition conditions at 120 oC for Al2O3 LT recipe
Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm
250 24.83 1.22 0.16 1.61
500 45.48 1.35 0.41 1.63
750 68.03 1.42 0.59 1.63
1000 90.66 1.74 0.94 1.63

%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%


The uniformity, thickness, refractive index has been obtained using Ellipsometer VASE.


  • Measured thickness distribution across 100 mm wafer.
    Measured thickness distribution across 100 mm wafer.
  • Measured refractive index distribution across 100 mm wafer.
    Measured refractive index distribution across 100 mm wafer.


Evgeniy Shkondin, DTU Danchip, 2014-2016.

Low temperature deposition of TiO2

Recipe: TiO2 LT

Temperature: 80-150 oC

TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.2 s 0.2 s
Purge time 10.0 s 15.0 s

Deposition rate: 0.048 nm/cycle (@ 120 oC)

This recipe has been developd for fabrication of high quality homogenious optical layers at low temperature. The deposited TiO2 layers are amorphous.


TiO2 deposition at 120 oC


Deposition conditions at 120 oC for TiO2 LT recipe
Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm
250 10.17 2.19 0.14 2.18
500 23.12 1.80 0.23 2.40
750 34.13 1.87 0.39 2.39
1000 46.13 1.78 0.50 2.39

%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 oC

Al2O3/TiO2 multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 oC


  • Al2O3/TiO2 multilayers grown on silicon trenches.
    Al2O3/TiO2 multilayers grown on silicon trenches.



Evgeniy Shkondin, DTU Danchip, 2014-2016.

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