Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions
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==Low temperature deposition of Al<sub>2</sub>O<sub>3</sub>== | ==Low temperature deposition of Al<sub>2</sub>O<sub>3</sub>== | ||
Recipe: | <b>Recipe: Al2O3 LT</b> | ||
Temperature:80-150 <sup>o</sup>C | <b>Temperature:80-150 <sup>o</sup>C</b> | ||
{| border="2" cellspacing="2" cellpadding="5" align="none" | {| border="2" cellspacing="2" cellpadding="5" align="none" | ||
Line 19: | Line 19: | ||
!Pulse time | !Pulse time | ||
|0.1 s | |0.1 s | ||
|0. | |0.2 s | ||
|- | |- | ||
!Purge time | !Purge time | ||
| | |5.0 s | ||
| | |10.0 s | ||
|- | |- | ||
|} | |} | ||
Deposition rate: <b>0. | Deposition rate: <b>0.089 nm/cycle </b>(@120 <sup>o</sup>C) | ||
==Low temperature deposition of TiO<sub>2</sub>== | ==Low temperature deposition of TiO<sub>2</sub>== |
Revision as of 15:33, 19 May 2016
This page describes non standart recipes including multilayers structures.
Low temperature deposition of Al2O3
Recipe: Al2O3 LT
Temperature:80-150 oC
TMA | H2O | |
---|---|---|
Nitrogen flow | 150 sccm | 200 sccm |
Pulse time | 0.1 s | 0.2 s |
Purge time | 5.0 s | 10.0 s |
Deposition rate: 0.089 nm/cycle (@120 oC)
Low temperature deposition of TiO2
Recipe: TiO2 LT
Temperature: 80-150 oC
TiCl4 | H2O | |
---|---|---|
Nitrogen flow | 150 sccm | 200 sccm |
Pulse time | 0.2 s | 0.2 s |
Purge time | 10.0 s | 15.0 s |
Deposition rate: 0.048 nm/cycle (@ 120 oC)
Low temperature grown multilayers on flat surfaces
Recipe: EMA01
Recipe: EMA02
Recipe: EMA03
Recipe: EMA04
Temperature: 120 oC
Al2O3/TiO2 multilayers on high aspect ratio structures
Recipe: Multi T
Temperature: 150 oC