Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions

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==Low temperature deposition of TiO<sub>2</sub>==
==Low temperature deposition of TiO<sub>2</sub>==


<b>Recipe: TiO2LT</b>
<b>Recipe: TiO2 LT</b>


<b>Temperature: 80-150 <sup>o</sup>C</b>
<b>Temperature: 80-150 <sup>o</sup>C</b>

Revision as of 15:31, 19 May 2016

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al2O3

Recipe: Al2O3LT

Temperature:80-150 oC

TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 3.0 s 4.0 s

Deposition rate: 0.085-0.097 nm/cycle (temperature dependent)

Low temperature deposition of TiO2

Recipe: TiO2 LT

Temperature: 80-150 oC

TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.2 s 0.2 s
Purge time 10.0 s 15.0 s

Deposition rate: 0.048 nm/cycle (@ 120 oC)

Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 oC

Al2O3/TiO2 multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 oC