Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions
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==Low temperature deposition of TiO<sub>2</sub>== | ==Low temperature deposition of TiO<sub>2</sub>== | ||
Recipe: TiO2LT | <b/>Recipe: TiO2LT<b> | ||
Temperature: 80-150 <sup>o</sup>C | <b/>Temperature: 80-150 <sup>o</sup>C<b> | ||
{| border="2" cellspacing="2" cellpadding="5" align="none" | |||
|- | |||
| | |||
!TiCl<sub>4</sub> | |||
!H<sub>2</sub>O | |||
|- | |||
!Nitrogen flow | |||
|150 sccm | |||
|200 sccm | |||
|- | |||
!Pulse time | |||
|0.2 s | |||
|0.2 s | |||
|- | |||
!Purge time | |||
|10.0 s | |||
|15.0 s | |||
|- | |||
|} | |||
Deposition rate: <b>0.048 nm/cycle </b>(@ 120 <sup>o</sup>C) | |||
==Low temperature grown multilayers on flat surfaces== | ==Low temperature grown multilayers on flat surfaces== |
Revision as of 14:51, 19 May 2016
This page describes non standart recipes including multilayers structures.
Low temperature deposition of Al2O3
Recipe: Al2O3LT
Temperature:80-150 oC
TMA | H2O | |
---|---|---|
Nitrogen flow | 150 sccm | 200 sccm |
Pulse time | 0.1 s | 0.1 s |
Purge time | 3.0 s | 4.0 s |
Deposition rate: 0.085-0.097 nm/cycle (temperature dependent)
Low temperature deposition of TiO2
Recipe: TiO2LT
Temperature: 80-150 oC
TiCl4 | H2O | |
---|---|---|
Nitrogen flow | 150 sccm | 200 sccm |
Pulse time | 0.2 s | 0.2 s |
Purge time | 10.0 s | 15.0 s |
Deposition rate: 0.048 nm/cycle (@ 120 oC)
Low temperature grown multilayers on flat surfaces
Recipe: EMA01
Recipe: EMA02
Recipe: EMA03
Recipe: EMA04
Temperature: 120 oC
Al2O3/TiO2 multilayers on high aspect ratio structures
Recipe: Multi T
Temperature: 150 oC