Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions

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Temperature:80-150 <sup>o</sup>C
Temperature:80-150 <sup>o</sup>C
{| border="2" cellspacing="2" cellpadding="5"  align="none"
|-
|
!TMA
!H<sub>2</sub>O
|-
!Nitrogen flow
|150 sccm
|200 sccm
|-
!Pulse time
|0.1 s
|0.1 s
|-
!Purge time
|3.0 s
|4.0 s
|-
|}
Deposition rate: <b>0.085-0.097 nm/cycle </b>(temperature dependent)


==Low temperature deposition of TiO<sub>2</sub>==
==Low temperature deposition of TiO<sub>2</sub>==

Revision as of 15:49, 19 May 2016

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al2O3

Recipe: Al2O3LT

Temperature:80-150 oC

TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 3.0 s 4.0 s

Deposition rate: 0.085-0.097 nm/cycle (temperature dependent)

Low temperature deposition of TiO2

Recipe: TiO2LT

Temperature: 80-150 oC

Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 oC

Al2O3/TiO2 multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 oC