Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions
| Line 6: | Line 6: | ||
Temperature:80-150 <sup>o</sup>C | Temperature:80-150 <sup>o</sup>C | ||
{| border="2" cellspacing="2" cellpadding="5" align="none" | |||
|- | |||
| | |||
!TMA | |||
!H<sub>2</sub>O | |||
|- | |||
!Nitrogen flow | |||
|150 sccm | |||
|200 sccm | |||
|- | |||
!Pulse time | |||
|0.1 s | |||
|0.1 s | |||
|- | |||
!Purge time | |||
|3.0 s | |||
|4.0 s | |||
|- | |||
|} | |||
Deposition rate: <b>0.085-0.097 nm/cycle </b>(temperature dependent) | |||
==Low temperature deposition of TiO<sub>2</sub>== | ==Low temperature deposition of TiO<sub>2</sub>== | ||