Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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*Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm | *Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm | ||
*TiO<sub>2</sub>: 0 - 100 nm | *TiO<sub>2</sub>: 0 - 100 nm | ||
*Pt: | *Pt: (not tested) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | ||
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*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C | *Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C | ||
*TiO<sub>2</sub>: 150-350 <sup>o</sup>C | *TiO<sub>2</sub>: 150-350 <sup>o</sup>C | ||
*Pt: | *Pt: (not tested) | ||
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|style="background:LightGrey; color:black"|Precursors | |style="background:LightGrey; color:black"|Precursors | ||