Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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==SiO2 etch using DUV mask [[Image:section under construction.jpg|70px]]== | ==SiO2 etch using DUV mask [[Image:section under construction.jpg|70px]]== | ||
Two chemistry regimes has been explored: One using CF4 and one using C4F8 | Two chemistry regimes has been explored: One using CF4 and one using C4F8 | ||
*CF4: bad selectivity to the resist mask. | |||
*C4F8: Better selectivity to the resist mask can be achieved | |||
*[[/By Peixiong|Tests done by Peixiong]] | |||
*[[/By BGHE|Tests done by Berit]] | *[[/By BGHE|Tests done by Berit]] | ||
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