Revision as of 13:03, 10 May 2016

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I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.

C4F8

CF4

Parameter	s006687	s006701	s007258	s007350	s007352
Mask material	750nm KRF	750nm KRF	750nm KRF	750 nm KRF	750nm KRF
Barc etch	none	none	none	none	none
Coil power	800W	800W	800w	800w	800w
Platen power	100W	100W	100w	60W	30w
Pressure	4mTorr	4mTorr	4mTorr	4mTorr	4mTorr
Flow rate CF4	20sccm	25sccm	30sccm	30sccm	30sccm
Flow rate H2	20sccm	15sccm	10sccm	10sccm	10sccm
T	0	0	0	0	0
Process time	10min	10min	2min30	2min30	3min30
Comment			Little resist left, Trenching	A little trenching	very little trenching in large lines - anti trenching in small lines
Results	profile near edge Profile near middel	tilted profile	s007350 2µm pitch	s007350 2µm pitch s007350 1µm pitch	s007352 1µm pitch s007352 2µm pitch
Etch depth in SiO2	374nm	505nm	578nm	336nm	235nm
Etch rate	37.4nm/min	50.5nm/min	231nm/min	134.4nm/min	88nm/min
Etch depth in resist	345nm	633nm	700nm	405nm	308nm
Selectivity (resist:SiO2)	1:1.1	1:0.80	1:0.83	1:0.83	1:0.76

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	I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.		I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.