Specific Process Knowledge/Lithography/DUVStepperLithography: Difference between revisions

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-The FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch large wafers/ devices. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm) leading to a specified resolution of 250 nm that is improved when well-defined pattern designs are used. The best resolution could be achieved with single line structures (line widths down to 160 nm) and multi-line structures (line widths down to 180 nm).
+The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch wafers/ devices having a throughput of up to 90 wafers per hour. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm). Its projection lens’ NA is variable over a range between 0,4 and 0,6. Additionally, the partial coherence factor (sigma) of the illumination system can be adjusted and different off-axis illumination modes can be selected.
+The critical dimension (CD) of patterns that can be realized is specified at around 250nm for arbitrary formed patterns in the standard illumination mode (NA=0,6; sigma=0,65). However, the best achievable resolution is different for each pattern type, pattern shape and pitch. So linewidths down to 160 nm could be achieved for geometrically simple patterns or pattern arrays (single and multiple line or pin-hole structures).