Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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[[image:DC_nyhed_3.jpg|320x320px|right|thumb|6" LPCVD nitride furnace (E3) located in cleanroom E-6]] | [[image:DC_nyhed_3.jpg|320x320px|right|thumb|6" LPCVD nitride furnace (E3) located in cleanroom E-6]] | ||
[[image:Furnace_nitride1.jpg|300x300px|right|thumb|4" LPCVD nitride furnace (B2) located in cleanroom B-1]] | [[image:Furnace_nitride1.jpg|300x300px|right|thumb|4" LPCVD nitride furnace (B2) located in cleanroom B-1]] | ||
==<span style="color:Red">From April 2016 the processed on the LPCVD nitride furnaces have been changed, so that only stoichiometric nitride is deposited in the 4" nitride furnace, and only low stress (silicon rich) nitride is deposited in the 6" nitride furnace</span>== | |||
[[image:Under_construction.png|100px]] | |||
==Deposition of Silicon Nitride using LPCVD== | ==Deposition of Silicon Nitride using LPCVD== | ||
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==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||
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