Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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*[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]] | *[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]] | ||
==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||
==<span style="color:Red">From April 2016 the processed on the LPCVD nitride furnaces have been changed, so that only stoichiometric nitride is deposited in the 4" nitride furnace, and only low stress (silicon rich) nitride is deposited in the 6" nitride furnace</span>== | ==<span style="color:Red">From April 2016 the processed on the LPCVD nitride furnaces have been changed, so that only stoichiometric nitride is deposited in the 4" nitride furnace, and only low stress (silicon rich) nitride is deposited in the 6" nitride furnace</span>== | ||