Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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The ALD reaction takes place under vacuum, thus a vacuum pump is connected to the bottom of the ALD reactor. The pump is located in the basement. | The ALD reaction takes place under vacuum, thus a vacuum pump is connected to the bottom of the ALD reactor. The pump is located in the basement. | ||
The liquid precursors (TMA, | The liquid precursors (TMA, TiCl<sub>4</sub>, MeCpPtMe<sub>3</sub> and H<sub>2</sub>O) are located in the cabinet below the ALD chamber. When these precursors are not in use, the manual valves have to be closed. Ozone is generated by use of an ozone generator that is located on the side of the machine. | ||
It is possible to change the sample holder, so that ALD deposition can take place on different samples, e.g. a small wafer batch or a number of smaller samples. Samples are loaded manually into the sample holder by use of a tweezer. | It is possible to change the sample holder, so that ALD deposition can take place on different samples, e.g. a small wafer batch or a number of smaller samples. Samples are loaded manually into the sample holder by use of a tweezer. | ||