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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions

Bghe (talk | contribs)
Created page with "I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 i..."
 
Bghe (talk | contribs)
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[[image:ICP_metal_s007258_15.jpg|100px|thumb|center| s007350 2µm pitch]]
[[image:ICP_metal_s007258_15.jpg|100px|thumb|center| s007350 2µm pitch]]
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[[image:ICP_metal_s007350_09.jpg|100px|thumb|center| s007350 2µm pitch]][[image:ICP_metal_s007350_13.jpg|100px|thumb|center| s007350 1µm pitch]]
[[image:ICP_metal_s007350_09.jpg|100px|thumb|center| s007350 2µm pitch]][[image:ICP_metal_s007350_13.jpg|100px|thumb|center| s007350 1µm pitch]]