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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
Line 771: Line 771:
|  width=136 style='width:102.0pt;border-top:none;border-left:none;  border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background:  #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal><span lang=DA>Images </span></p>
|  width=136 style='width:102.0pt;border-top:none;border-left:none;  border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background:  #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal><span lang=DA>Images </span></p>
|  width=108 style='width:81.0pt;border-top:none;border-left:none;  border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background:  #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal></p>
|  width=108 style='width:81.0pt;border-top:none;border-left:none;  border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background:  #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal></p>
|  width=119 style='width:89.0pt;border-top:none;border-left:none;  border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background:  #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal>Too much polymer, etch Si too much</p><p class=MsoNormal>Etch through 500nm apox, then etch Si 180nm,</p>
|  width=119 style='width:89.0pt;border-top:none;border-left:none;  border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background:  #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal>Images 2</p>
|  width=121 style='width:91.0pt;border-top:none;border-left:none;  border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background:  #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal>Profile Very good, 2min etch SiO3 350nm in wafer center,
|  width=121 style='width:91.0pt;border-top:none;border-left:none;  border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background:  #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal>Images 3</p>
310nm in wafer, resist etched 260nm</p>
|  width=128 valign=top style='width:96.0pt;border-top:none;border-left:  none;border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;  background:#D0D8E8;padding:3.6pt 7.2pt 3.6pt 7.2pt;height:52.5pt' | <p class=MsoNormal>Images 4</p>
|  width=128 valign=top style='width:96.0pt;border-top:none;border-left:  none;border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;  background:#D0D8E8;padding:3.6pt 7.2pt 3.6pt 7.2pt;height:52.5pt' | <p class=MsoNormal>Low pressure gives better profile, less polymer, however,
CF4 etch Si too quick</p>


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