Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong: Difference between revisions
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| width=119 style='width:89.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #E9EDF4;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:29.25pt' | <p class=MsoNormal><span lang=DA>13.6%</span></p> | | width=119 style='width:89.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #E9EDF4;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:29.25pt' | <p class=MsoNormal><span lang=DA>13.6%</span></p> | ||
| width=121 style='width:91.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #E9EDF4;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:29.25pt' | <p class=MsoNormal><span lang=DA>17%</span></p> | | width=121 style='width:91.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #E9EDF4;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:29.25pt' | <p class=MsoNormal><span lang=DA>17%</span></p> | ||
| width=128 style='width:96.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #E9EDF4;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:29.25pt' | | |||
|- style='height:52.5pt' | |||
| width=136 style='width:102.0pt;border:solid white 1.0pt;border-top:none; background:#D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | | |||
| width=136 style='width:102.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal><span lang=DA>Images </span></p> | |||
| width=108 style='width:81.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal></p> | |||
| width=119 style='width:89.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal>Too much polymer, etch Si too much</p><p class=MsoNormal>Etch through 500nm apox, then etch Si 180nm,</p> | |||
| width=121 style='width:91.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #D0D8E8;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:52.5pt' | <p class=MsoNormal>Profile Very good, 2min etch SiO3 350nm in wafer center, | |||
310nm in wafer, resist etched 260nm</p> | |||
| width=128 valign=top style='width:96.0pt;border-top:none;border-left: none;border-bottom:solid white 1.0pt;border-right:solid white 1.0pt; background:#D0D8E8;padding:3.6pt 7.2pt 3.6pt 7.2pt;height:52.5pt' | <p class=MsoNormal>Low pressure gives better profile, less polymer, however, | |||
CF4 etch Si too quick</p> | |||
| width=128 style='width:96.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #E9EDF4;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:29.25pt' | | | width=128 style='width:96.0pt;border-top:none;border-left:none; border-bottom:solid white 1.0pt;border-right:solid white 1.0pt;background: #E9EDF4;padding:2.25pt 2.25pt 2.25pt 2.25pt;height:29.25pt' | | ||
|- style='height:52.5pt' | |- style='height:52.5pt' | ||