Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong: Difference between revisions

Revision as of 13:59, 2 May 2016

	bad	bad	bad	bad	bad
Date	Feb122013	Feb122013	Feb122013	Feb122013	Feb122013
Metal ICP recipe	pxSiO2try1	pxSiO2try1	pxSiO2try1	pxSiO2try2	pxSiO2try2
Wafer size and ID	6inch 6A	6inch 6A1_feb112013	6inch, 6A2_feb112013	6inch, 6A3_feb112013	6inch, 6A4_feb112013
Mask	Blank Si dummy test	Blank apox, 3539nm	Blank KRF 347.9nm	Blank KRF 345nm	Blank apox 4623m
Etch time	2min	2min	1min	1min	1min
Pressure [mTorr]	8	8	8	20	20
C4F8 flow [sccm]		20	20	20	20
CF4 flow [sccm]	40	40	40	40	40
H2 flow [sccm]	20	20	20	20	20
Coil Power [W]	800	800	800	800	800
Platen Power [W]	200	200	200	200	200
Platen temperature [^oC]	20	20	20	20	20
Coil match	59%, 27%	59%, 27%	59%, 27%	48%, 29%	48%, 29%
Platen Match	45%, 56%	45%, 56%	45%, 56%	52%, 60%	52%, 60%
Throde valve opening rate	16%	16%	16%	10.7%	10.7%
Etch rate	µm/min	Wf center 238µm/min Wafer edge 230nm/min	Wafer center 170.5nm/min 1cm from wf edge , 204.1nm/min	Wf center 80.4µm/min Wafer edge 119.6nm/min	Wafer center 128.26nm/min, 1cm from wafer edge 123.09nm/min
Distance from wf cent (mm)					Seletivity at cent
Remaining APOX thickness nm		Wf center 3062nm 1cm from wf edge: 3079nm	Wf center nm		Too much polymer in sem
Comments

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by reist mask try<o:p></o:p>

Date<o:p></o:p>

Feb252013<o:p></o:p>

Feb262013<o:p></o:p>

on 62nmBarc on 1190nm apox<o:p></o:p>

780nm resist on 62nmBarc on 492nm apox, first etch barc 20sec by Ox plasma<o:p></o:p>

440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma<o:p></o:p>

rate<o:p></o:p>

10%<o:p></o:p>

13.6%<o:p></o:p>

17%<o:p></o:p>

71degree<o:p></o:p>

Too much polymer, etch Si too much<o:p></o:p>

Etch through 500nm apox, then etch Si 180nm,<o:p></o:p>

Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm<o:p></o:p>

Low pressure gives

better profile, less polymer, however, CF4 etch Si too quick<o:p></o:p>

<o:p> </o:p>

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