Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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C4F8: | C4F8: Better selectivity to the resist mask can be achieved | ||
[[/By Peixiong|Tests done by Peixiong]] | |||
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Bghe (talk | contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,315 edits |
Bghe (talk | contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,315 edits |
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| Line 86: | Line 86: | ||
C4F8: | C4F8: Better selectivity to the resist mask can be achieved | ||
[[/By Peixiong|Tests done by Peixiong]] | |||
<br/> | <br/> | ||