Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

Revision as of 13:05, 2 May 2016 view source Bghe (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,317 edits →SiO2 etch using DUV mask 70px ← Older edit		Revision as of 13:14, 2 May 2016 view source Bghe (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,317 edits →SiO2 etch using DUV mask 70px Newer edit →
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	Two chemistry regimes has been explored: One using CF4 and one using C4F8		Two chemistry regimes has been explored: One using CF4 and one using C4F8

	CF4:		CF4: bad selectivity to the resist mask.