Jump to content

Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
Line 173: Line 173:
|-
|-
|}
|}
'''Process flow:'''
 
*Si, APOX 1152nm by filmtek
*Si  zep520A 560nm by dektakXT
*jbx9500: 60na ap7 MF for all the exposure
**same step size: 20nm
**px1283mk: alignment mark for finfet
**dose 280uc  3x3 at x pitch 10mm y pitch10mm in wafer center
  px1283lablejan1542014t1  250uc
    at 40mm x y
  pxline400p1000jan142014dt2
  y=    -40    -45  -50  -55mm
  dose  200  240  280  320uc
*N50  20c  2min IPA, N2 gental blow dry 18:10 Jan152014
*Bruker Dektakxt  Zep 560.51nmk
*Metal ICP, 19:00 Jan152014, pxSiO2try9, -10C, 5min
*Filmtek:large Apox area 5mmx3mm without zep  SiO2 remains
**494.53nm
**SiO2 etched 1152-495=657nm
**SiO2 etch rate: 131nm/min
*sem zeiss,  1:50am Jan162014 still as over 200nm zep remains on the wafer for line400p1000, need high dose as 320uc. 280uc is not enough to go through 560nm thick zep520A
<br clear=""all" />
<br clear=""all" />


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_oxide"