Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

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 ==SiO2 etch with e-beam resist [[Image:section under construction.jpg|70px]]==
+===Simple 2 column table===
+{| class="wikitable collapsible collapsed" border="1" cellspacing="1" cellpadding="2"  align="left"
+! Process flow
+|-
+|
+*Si, APOX 1152nm by filmtek
+*Si  zep520A 560nm by dektakXT
+*jbx9500: 60na ap7 MF for all the exposure
+**same step size: 20nm
+**px1283mk: alignment mark for finfet
+**dose 280uc  3x3 at x pitch 10mm y pitch10mm in wafer center
+   px1283lablejan1542014t1  250uc
+    at 40mm x y
+   pxline400p1000jan142014dt2
+   y=    -40    -45   -50   -55mm
+   dose   200   240   280   320uc
+*N50  20c  2min IPA, N2 gental blow dry 18:10 Jan152014
+*Bruker Dektakxt   Zep 560.51nmk
+*Metal ICP, 19:00 Jan152014, pxSiO2try9, -10C, 5min
+*Filmtek:large Apox area 5mmx3mm without zep   SiO2 remains
+**494.53nm
+**SiO2 etched 1152-495=657nm
+**SiO2 etch rate: 131nm/min
+*sem zeiss,  1:50am Jan162014 still as over 200nm zep remains on the wafer for line400p1000, need high dose as 320uc. 280uc is not enough to go through 560nm thick zep520A
+|-
+|}
 '''Process flow:'''
 *Si, APOX 1152nm by filmtek