Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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**SiO2 etch rate: 131nm/min | **SiO2 etch rate: 131nm/min | ||
*sem zeiss, 1:50am Jan162014 still as over 200nm zep remains on the wafer for line400p1000, need high dose as 320uc. 280uc is not enough to go through 560nm thick zep520A | *sem zeiss, 1:50am Jan162014 still as over 200nm zep remains on the wafer for line400p1000, need high dose as 320uc. 280uc is not enough to go through 560nm thick zep520A | ||
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