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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
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|-
|Etch rate of thermal oxide
|Etch rate of thermal oxide
|'''>110 nm/min (50% etch load) (09-03-2015)'''  
|'''131 nm/min (15-01-2014)'''  
|-
|-
|Selectivity to  resist [:1]
|Selectivity to  resist [:1]
|'''<0.7:1''' (SiO2:resist)
|'''~1.8:1''' (SiO2:resist)
|-
|Wafer uniformity (100mm)
|Not known
|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
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