Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
| Line 153: | Line 153: | ||
|- | |- | ||
|Platen Power [W] | |Platen Power [W] | ||
| | |150 | ||
|- | |- | ||
|Platen temperature [<sup>o</sup>C] | |Platen temperature [<sup>o</sup>C] | ||
|0 | |0 | ||
|- | |- | ||
| | |C<sub>4</sub>F<sub>8</sub> flow [sccm] | ||
| | |8 | ||
|- | |- | ||
|H<sub>2</sub> flow [sccm] | |H<sub>2</sub> flow [sccm] | ||
| | |30 | ||
|- | |- | ||
|Pressure [mTorr] | |Pressure [mTorr] | ||
| | |2.5 | ||
|- | |- | ||
|} | |} | ||