Specific Process Knowledge/Characterization/SEM LEO

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SEM LEO

The SEM LEO

A Danchip there are four scanning electron microscopes (SEMs). These SEMs cover a wide range of needs both in the cleanroom and outside: From the fast in-process verification of different process parameters such as etch rates, step coverages or lift-off quality to the ultra high resolution images on any type of sample intended for publication.

All SEMs are operated by use of the same software, hardpanel and joystick. But there are small hardware differences, thus a training is needed for each SEM you want to use.

The SEM LEO was installed in the cleanroom in the 1998, and the software was ungraded in 2012.

This SEM will cover most users need. It is a very reliable and rugged instrument that provides high quality images of most samples. Excellent images on a large variety of materials such as semiconductors, semiconductor oxides or nitrides, metals, thin films and some polymers may be acquired on the SEM.

The SEM LEO is good, reliable, the software is basically indentical to the SEM Zeiss software, and for conducting samples (or thin layers, < 5-10 µm, of hard non-conducting materials such as oxide/nitride on top a conducting substrate) the resolution of the SEM LEO is almost comparable to the both the SEM 1, SEM 2 and SEM 3 Supra 60VP.

The SEM is is equipped with a Raith e-beam writing system.

The user manual, control instruction, the user APV and contact information can be found in LabManager:

SEM LEO info page in LabManager,

Performance information

• SEM comparison table

Link til Raith information

Equipment performance and process related parameters

Equipment		SEM LEO (Leo 1550 SEM)
Purpose	Imaging and measurement of	Any (semi)conducting sample that may have thin (> ~ 5 µm) layers of non-conducting materials on top
Location		Cleanroom of DTU Danchip
Performance	Resolution	~ 5 nm (limited by vibrations) The resolution is strongly dependent on the type of sample and the skills of the operator.
Instrument specifics	Detectors	Secondary electron (Se2) Inlens secondary electron (Inlens) Backscatter electron (BSD)
	Stage	X, Y: 125 × 100 mm T: 0 to 90o R: 360o Z: 48 mm
	Electron source	FEG (Field Emission Gun) source
	Operating pressures	Fixed at High vacuum (2 × 10-5mbar - 10-6mbar)
	Options	Raith Elphy Quantum E-Beam Litography system
Substrates	Batch size	1 100 mm wafer 1 150 mm wafer (not full view) Smaller samples
	Allowed materials	Any standard cleanroom materials. Use dedicated samples holders for samples from Black Magic PECVD