Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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It is possible to etch SiO2 in the ICP metal etcher but it is not designed for it and the results are not fantastic. It is a challenge to get a good selectivity to resist (typically in the range of 1:1 or worse) and it is probably not possible to get a profile angle of 90 degrees. More likely about 75-85 degrees. | It is possible to etch SiO2 in the ICP metal etcher but it is not designed for it and the results are not fantastic. It is a challenge to get a good selectivity to resist (typically in the range of 1:1 or worse) and it is probably not possible to get a profile angle of 90 degrees. More likely about 75-85 degrees. | ||
==Slow etch of SiO2 with resist as masking material - using a 6" carrier wafer with recess == | |||
This recipe can be used for slow etching of SiO2 with resist as masking material. Here are some test results presented. | This recipe can be used for slow etching of SiO2 with resist as masking material. Here are some test results presented. | ||