Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions
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|Platen temperature [<sup>o</sup>C] | |Platen temperature [<sup>o</sup>C] | ||
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|CF<sub>4</sub> flow [sccm] | |CF<sub>4</sub> flow [sccm] | ||
Revision as of 07:40, 20 April 2016
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| Parameter | Parameter settings |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 20 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | Test by Artem Shikin @ Fotonik |
|---|---|
| Etch rate of PECVD BPSG | 39.4nm/min (22-01-2016) |
| Selectivity to resist [:1] | Not known |
| Wafer uniformity (100mm) | Not known |
| Profile [o] | Not known |
| Wafer uniformity map (click on the image to view a larger image) | Not known |
| SEM profile images | NONE |
| Comment | Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s |