Jump to content

Specific Process Knowledge/Lithography/DUVStepperLithography: Difference between revisions

← Older editNewer edit →
VisualWikitext
Makei (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
129 edits
Makei (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
129 edits
Line 198: Line 198:
[[Image:140 250 nm tilt22 (1).jpg|350x350px|right|thumb|The SEM picture of 250nm pillors and lines. Exposure dose is 140 J/m2.]]
[[Image:140 250 nm tilt22 (1).jpg|350x350px|right|thumb|The SEM picture of 250nm pillors and lines. Exposure dose is 140 J/m2.]]
The spinning process will be performed by the customer together with the Photolith group of Danchip. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.  
The spinning process will be performed by the customer together with the Photolith group of Danchip. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.  
We have observed that using automatic developing we can decrease the exposure dose for resolve the 250nm pillors structures comparing to dose needed for resolve the line the same size.


Here you can find a [[media:250nm_ines_and_pillars_after_developing_i_60sec.pdf| chart‎]] demonstrating a dependence between 250nm line width/pillors diameter and exposure dose.
Here you can find a [[media:250nm_ines_and_pillars_after_developing_i_60sec.pdf| chart‎]] demonstrating a dependence between 250nm line width/pillors diameter and exposure dose.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography"