Specific Process Knowledge/Lithography/DUVStepperLithography: Difference between revisions
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*Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus it is recommended to perform an exposure dose test as a first test, when a new reticle is used. After evaluation by SEM the identified dose - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers. | *Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus it is recommended to perform an exposure dose test as a first test, when a new reticle is used. After evaluation by SEM the identified dose - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers. | ||
* The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the | * The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer. | ||
== Equipment performance and process related parameters == | == Equipment performance and process related parameters == | ||