Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions

← Older editNewer edit →
VisualWikitext
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,569 edits
No edit summary
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,569 edits
Line 95: Line 95:
=== Results ===
=== Results ===


A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in 4 microns of AZ photoresist. The wafers are then etched using two different durations of process B in the DRIE-Pegasus.
A number of wafers are patterned with the [[Specific Process Knowledge/Pattern Design/Travka|Travka mask set]] in 4 microns of AZ photoresist. The wafers are then etched using two different durations of process B in the DRIE-Pegasus.


{|
{|
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/processB"