Specific Process Knowledge/Wafer cleaning/RCA: Difference between revisions

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==RCA cleaning==
==RCA cleaning==
[[Image:RCA_bench_cleanroom_2.jpg|300x300px|thumb|RCA bench: positioned in cleanroom 2. <br /> RCA1 - RCA2 - HF - ?]]


The RCA clean is used for cleaning the wafers before taking them into the furnaces and a few other equipments (check the cross contamination sheet).
The RCA clean is used for cleaning the wafers before taking them into the furnaces and a few other equipments (check the cross contamination sheet).

Revision as of 10:45, 4 March 2008

RCA cleaning

RCA bench: positioned in cleanroom 2.
RCA1 - RCA2 - HF - ?

The RCA clean is used for cleaning the wafers before taking them into the furnaces and a few other equipments (check the cross contamination sheet). It consists of two solutions: RCA1 and RCA2 plus diluted HF. A crucial part of the RCA clean is the oxidation by HO. Therefore the life time of the RCA solutions are limited by the presence of the HO which is highly volatile at 70 C.

  • The RCA1 contains: HO, NHOH and HO (5:1:1). It is used for removal of light organics, particles and metal.
  • The RCA2 contains: HO, HCl and HO (5:1:1). It is used for removal of heavy metals, alkalies and metal hydroxides.

RCA procedure

  • RCA1: 10 min
  • DI water rinsing (dumping three times)
  • HF: 30 sec (avoid it if you have oxide as the top layer)
  • DI water rinsing (dumping three times)
  • RCA2: 10 min
  • DI water rinsing (dumping three times)
  • Optional: HF: 30 sec (avoid it if you have oxide as the top layer)
  • DI water rinsing (dumping three times)

For procedure details please look in the user manual positioned in LabManager.

Overview of RCA process data

RCA1 RCA2 HF
General description

It is used for removal of light organics, particles and metal.

It is used for removal of heavy metals, alkalies and metal hydroxides.

It is used for removal of oxide generated in RCA1 and RCA2

Chemical solution HO, NHOH(29%) and HO(30%) (5:1:1) HO, HCl(37%) and HO(30%) (5:1:1) 5% HF
Process temperature 70-80 oC 70-80 oC Room temperature
Process time

10 min.

10 min.

30 sec.

Life time of the chemical solutions Can only be heated one time. When hot: it lasts for ~1h Can only be heated one time. When hot: it lasts for ~1h ~2 months
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Quartz wafers/fused silica
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Quartz wafers/fused silica
  • Silicon
  • Silicon oxide
  • Silicon nitride
Batch size

1-25 2",4" or 6" wafers at a time

1-25 2",4" or 6" wafers at a time

1-25 2",4" or 6" wafers at a time

Size of substrate

4"-6" wafers
For 2" wafers please contact Danchip staff

4"-6" wafers
For 2" wafers please contact Danchip staff

4"-6" wafers
For 2" wafers please contact Danchip staff