Specific Process Knowledge/Wafer cleaning/RCA: Difference between revisions
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===RCA procedure=== | ===RCA procedure=== | ||
*RCA1: 10 min | *RCA1: 10 min | ||
*DI | *DI water rinsing (dumping three times) | ||
*HF: 30 sec (avoid it if you have oxide as the top layer) | *HF: 30 sec (avoid it if you have oxide as the top layer) | ||
*DI | *DI water rinsing (dumping three times) | ||
*RCA2: 10 min | *RCA2: 10 min | ||
*DI | *DI water rinsing (dumping three times) | ||
*Optional: HF: 30 sec (avoid it if you have oxide as the top layer) | *Optional: HF: 30 sec (avoid it if you have oxide as the top layer) | ||
*DI | *DI water rinsing (dumping three times) | ||
===Overview of RCA process data=== | ===Overview of RCA process data=== | ||