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Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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Bureaucrats, danchip, Administrators
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Bureaucrats, danchip, Administrators
2,908 edits
Line 73: Line 73:
|'''Batch size'''
|'''Batch size'''
|
|
1-25 wafers of 4" at a time
Beaker:
*
*1-5 wafer of 4" at a time
PP-bath:
*1-25 wafers of 4" at a time
BHF-bath in cleanroom3:
*1-25 wafers of 4" at a time
|
|
Beaker:
Beaker:
1-5 wafer of 4" at a time
*1-5 wafer of 4" at a time
 
PP-bath:
RCA bench: 1-25 wafers of 4" at a time
*1-25 wafers of 4" at a time
RCA bench:  
*1-25 wafers of 4" at a time
|
|
1-25 wafer of 4" at a time
1-25 wafer of 4" at a time
Line 92: Line 100:
|'''Allowed materials'''
|'''Allowed materials'''
|
|
In beaker or PP-bath in the fume hood in cleanroom 2:
*All materials
BHF-bath in cleanroom3:
*Silicon
*Silicon
*Silicon nitrides
*Silicon nitrides
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