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Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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*TEOS:~153nm/min
*TEOS:~153nm/min
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*Wet thermal oxide:~80nm/min
A little higher etch rates than BHF
*PECVD1 (standard):~147nm/min
*TEOS:~265nm/min
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|'''[[#Life_time_of_the_photoresist_and_blue_film_in_BHF|Life time of the photoresist]]'''
|'''[[#Life_time_of_the_photoresist_and_blue_film_in_BHF|Life time of the photoresist]]'''
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