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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Paphol (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
912 edits
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!Comments
!Comments
|-  
|-  
|"TEOSPNE"
|"Standby" or "Stb-slw"
|4" wafers
|4" wafers
1-17 wafers in a run
1-17 wafers in a run
|725
|725
|190
|atmosphere
|50
|0
|30
|0
|0
|0
|0
|0
|Standard TEOS recipe
|For load and unload the wafers
|-
|-
|"TEOSSLOW"
|"TEOS"
|4" wafers
|4" wafers
1-17 wafers in a run
1-17 wafers in a run
Line 46: Line 46:
|0
|0
|0
|0
|Recipe used for thick layers
|Process recipe
|}
|}


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