Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions
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== | ==LPCVD TEOS Furnace (B3)== | ||
[[Image:teos1.jpg|300x300px|thumb|Figure 1: TEOS structure]] | [[Image:teos1.jpg|300x300px|thumb|Figure 1: TEOS structure]] | ||
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TEOS can be used as an alternative to thermally grown or PECVD oxide, it has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a very high surface mobility enabling it to fill holes that has a large aspect ratio and leaving the surface quite smooth see figure 2, hence it also covers corners and side walls very well. | TEOS can be used as an alternative to thermally grown or PECVD oxide, it has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a very high surface mobility enabling it to fill holes that has a large aspect ratio and leaving the surface quite smooth see figure 2, hence it also covers corners and side walls very well. | ||
==Process parameters for the two standard deposition recipes on the TEOS furnace:== | ==Process parameters for the two standard deposition recipes on the TEOS furnace:== | ||