Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | ||
|style="background:silver; color:black;" align="left"|'''[[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ|JEOL JBX-9500FSZ]]''' | |style="background:silver; color:black;" align="left"|'''[[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ|JEOL JBX-9500FSZ]]''' | ||
|style="background:silver; color:black;" align="left"|'''[[Specific_Process_Knowledge/Lithography/EBeamLithography/RaithElphy|Raith Elphy]]''' | |style="background:silver; color:black;" align="left"|'''[[Specific_Process_Knowledge/Lithography/EBeamLithography/RaithElphy|Raith Elphy]]'''] | ||
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|style="background:LightGrey; color:black"|Resolution | |style="background:LightGrey; color:black"|Resolution | ||
|style="background:WhiteSmoke; color:black"|~5 nm beam diameter, ~10 nm lines obtained in 50 nm thick resist (CSAR) | |style="background:WhiteSmoke; color:black"|~5 nm beam diameter, ~10 nm lines obtained in 50 nm thick resist (CSAR) | ||
| | |style="background:WhiteSmoke; color:black"|~70 nm lines obtained in 50 nm thick resist (CSAR) | ||
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|style="background:LightGrey; color:black"|Maximum writing area without stitching | |style="background:LightGrey; color:black"|Maximum writing area without stitching | ||
|style="background:WhiteSmoke; color:black"|1mm x 1mm | |style="background:WhiteSmoke; color:black"|1mm x 1mm | ||
| | |style="background:WhiteSmoke; color:black"|2mm x 2mm<sup>a</sup> | ||
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|style="background:LightGrey; color:black"|Scanning speed | |style="background:LightGrey; color:black"|Scanning speed | ||
|style="background:WhiteSmoke; color:black"|100 MHz | |style="background:WhiteSmoke; color:black"|100 MHz | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"|6 MHz | ||
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|style="background:LightGrey; color:black"|Min. electron beam size | |style="background:LightGrey; color:black"|Min. electron beam size | ||
|style="background:WhiteSmoke; color:black"|4 nm | |style="background:WhiteSmoke; color:black"|4 nm | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"|Not measured | ||
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|style="background:LightGrey; color:black"|Min. step size | |style="background:LightGrey; color:black"|Min. step size | ||
|style="background:WhiteSmoke; color:black"|1 nm | |style="background:WhiteSmoke; color:black"|1 nm | ||
|style="background:WhiteSmoke; color:black"|1 nm | |style="background:WhiteSmoke; color:black"|1 nm<sup>a</sup> | ||
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|style="background:LightGrey; color:black"|Beam current range | |style="background:LightGrey; color:black"|Beam current range | ||
|style="background:WhiteSmoke; color:black"|0.1nA to 60nA in normal conditions | |style="background:WhiteSmoke; color:black"|0.1nA to 60nA in normal conditions | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"|0.01 to 5 nA<sup>a</sup> | ||
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|style="background:LightGrey; color:black"|Dose range | |style="background:LightGrey; color:black"|Dose range | ||
|style="background:WhiteSmoke; color:black"| 0.001 - 100000µC/cm<sup>2</sup> | |style="background:WhiteSmoke; color:black"| 0.001 - 100000µC/cm<sup>2</sup> | ||
|style="background:WhiteSmoke; color:black"| µC/cm<sup>2</sup> | |style="background:WhiteSmoke; color:black"| 0.000001 µC/cm<sup>2</sup> to infinity<sup>a,b</sup> | ||
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*1 x 6" wafer | *1 x 6" wafer | ||
*Special wafer cassette with slit openings of 20 mm (position A), 12 mm (position B), 8 mm (position C) and 4 mm (position D). | *Special wafer cassette with slit openings of 20 mm (position A), 12 mm (position B), 8 mm (position C) and 4 mm (position D). | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| Only chips, max dimension about 20 x 20 mm. | ||
(If at least one dimension is less than 23 mm, bigger chips (e.g. 40 x 20) may be allowed - contact Danchip) | |||
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<sup>a</sup> Both the Raith tool and the attached LEO SEM allow for ample freedom in most parameters. The limits indicated refer to best cases and may be further constrained by other microscope or patterning parameters. | |||
<sup>b</sup> For all applicable purposes | |||
<br clear="all" /> | <br clear="all" /> | ||