Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions
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== InP or GaAs substrate etching == | == InP or GaAs substrate etching == | ||
When etching InP or GaAs substrates, both 2” wafers and small pieces, you should collect the chemicals | When etching InP or GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers. | ||
There should be two bottles in the fumehood one for HCl used to etch InP substrates and one for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates. | There should be two bottles in the fumehood one for HCl used to etch InP substrates and one for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates. | ||