Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions
No edit summary |
No edit summary |
||
| Line 4: | Line 4: | ||
|-style="background:Gray; color:White" | |-style="background:Gray; color:White" | ||
!Parameter | !Parameter | ||
! | !Process parameters | ||
|- | |- | ||
|Coil Power [W] | |Coil Power [W] | ||
Revision as of 10:19, 11 February 2016
Feedback to this page: click here
| Parameter | Process parameters |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 0 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | Test by Artem Shikin @ Fotonik |
|---|---|
| Etch rate of PECVD BPSG | 39.4nm/min (22-01-2016) |
| Selectivity to resist [:1] | Not known |
| Wafer uniformity (100mm) | Not known |
| Profile [o] | Not known |
| Wafer uniformity map (click on the image to view a larger image) | Not known |
| SEM profile images | NONE |
| Comment | Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s |