Jump to content

LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition: Difference between revisions

Bghe (talk | contribs)
No edit summary
Bghe (talk | contribs)
Line 12: Line 12:
From the fabrication standpoint, HMMs turn out to be deceptively simple: a typical geometry consists of a repeated basic metal-dielectric bilayer stack or a lattice of metallic nanowires embedded in a dielecric matrix. However, for the salient HMM properties to be pronounced, ultrathin, nanometer-scale thicknesses are required.
From the fabrication standpoint, HMMs turn out to be deceptively simple: a typical geometry consists of a repeated basic metal-dielectric bilayer stack or a lattice of metallic nanowires embedded in a dielecric matrix. However, for the salient HMM properties to be pronounced, ultrathin, nanometer-scale thicknesses are required.
The required high-quality ultrathin layers (around 10 nm) can be fabricated using atomic layer deposition (ALD). ALD is a cyclic self-limiting thin film deposition technology allowing molecule level thickness control. As the deposition relies on a surface reaction, conformal pinhole free films can be deposited.
The required high-quality ultrathin layers (around 10 nm) can be fabricated using atomic layer deposition (ALD). ALD is a cyclic self-limiting thin film deposition technology allowing molecule level thickness control. As the deposition relies on a surface reaction, conformal pinhole free films can be deposited.
The main challenge of implementation of ALD processing for HMM fabrication is the requirement for depositing alternating layers of metals (Ag, Cu, W) and dielectric spacers (alumina, titania, silica) . Required thicknesses are in the range 5-15 nm for metals and 10-20 nm for dielectrics (oxides).<br>
The main challenge of implementation of ALD processing for HMM fabrication is the requirement for depositing alternating layers of metals (Ag, Cu, W) and dielectric spacers (alumina, titania, silica) . Required thicknesses are in the range 5-15 nm for metals and 10-20 nm for dielectrics (oxides).<br clear="all" />


==Publications==
==Publications==