Specific Process Knowledge/Lithography: Difference between revisions
Appearance
| Line 264: | Line 264: | ||
*[[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ#Getting_started|Training on JEOL JBX-9500FSZ]] | *[[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ#Getting_started|Training on JEOL JBX-9500FSZ]] | ||
*[[Specific_Process_Knowledge/Lithography/EBeamLithography#E-beam_resists_and_Process_Flows|E-beam resists and process flows]] | *[[Specific_Process_Knowledge/Lithography/EBeamLithography#E-beam_resists_and_Process_Flows|E-beam resists and process flows]] | ||
*[[:Media:E-beam Lithography Lecture Tine Greibe 2015.pdf| | *[[:Media:E-beam Lithography Lecture Tine Greibe 2015.pdf|Lecture on E-beam Lithography]] | ||
Revision as of 12:22, 3 February 2016

Feedback to this page: click here
Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
|---|---|---|---|---|---|
| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Patterning by electron beam | Pattern transfer via hot embossing(HE) | Direct writing via IR laser |
| Pattern size range |
|
|
|
|
|
| Resist type |
|
|
|
|
|
| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet or coating |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
|
|
We have cassettes that fit to
Only one cassette can be loaded at time |
|
|
| Allowed materials |
|
|
|
|
|
Equipment Pages
|
3D Lithography | ||
Knowledge and Information about Lithography
THIS SECTION IS UNDER CONSTRUCTION
|
Literature
Training
|
UV Exposure
Deep-UV Exposure
|
Development
|