Specific Process Knowledge/Lithography: Difference between revisions
Appearance
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'''<big>UV Exposure</big>''' | '''<big>UV Exposure</big>''' | ||
*[[: | *[[:Media:Litho Tool Package - Exposure TARAN.pdf|Link to slides on UV exposure]] | ||
*[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=339 Training Video: UV Exposure]''' | *[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=339 Training Video: UV Exposure]''' | ||
*[[Specific_Process_Knowledge/Lithography/UVExposure_Dose|Information on UV Exposure Dose]] | *[[Specific_Process_Knowledge/Lithography/UVExposure_Dose|Information on UV Exposure Dose]] | ||
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'''<big>Post-Processing</big>''' | '''<big>Post-Processing</big>''' | ||
*[[: | *[[:Media:Litho Tool Package - PostProcessing TARAN.pdf|Link to slides on post-processing]] | ||
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'''<big>UV Resists</big>''' | '''<big>UV Resists</big>''' | ||
*[[: | *[[:Media:Litho Tool Package - Resist TARAN.pdf|Link to slides on photoresist]] | ||
*[[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|UV Resist Overview]] | *[[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|UV Resist Overview]] | ||
'''<big>Inspection of Resist</big>''' | '''<big>Inspection of Resist</big>''' | ||
*[[: | *[[:Media:Litho Tool Package - Inspection v4 TARAN.pdf|Link to slides on inspection]] | ||
Revision as of 13:12, 29 January 2016

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Patterning by electron beam | Pattern transfer via hot embossing(HE) | Direct writing via IR laser |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet or coating |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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Equipment Pages
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3D Lithography | ||
Training
THIS SECTION IS UNDER CONSTRUCTION
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Literature
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Electron Beam Exposure
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UV Resists
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