Specific Process Knowledge/Lithography: Difference between revisions
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*[[Specific Process Knowledge/Lithography/UVExposure#Inclined UV lamp|Inclined UV lamp]] | *[[Specific Process Knowledge/Lithography/UVExposure#Inclined UV lamp|Inclined UV lamp]] | ||
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===[[Specific Process Knowledge/Lithography/UVExposure|Electron Beam Exposure]]=== | |||
*[[Specific Process Knowledge/Lithography/EBeamLithography|E-beam writer]] | |||
===[[Specific Process Knowledge/Lithography/UVExposure|Deep-UV Exposure]]=== | |||
*[[Specific Process Knowledge/Lithography/DUVStepper#DUV Stepper FPA-3000EX4 from Canon|DUV Stepper FPA-3000EX4 from Canon]] | |||
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*[[Specific Process Knowledge/Lithography/LiftOff#LiftOffWetBench|Lift-off Wet Bench]] | *[[Specific Process Knowledge/Lithography/LiftOff#LiftOffWetBench|Lift-off Wet Bench]] | ||
*[[Specific Process Knowledge/Lithography/LiftOff#LiftOff(4",6")|Lift-off (4", 6")]] | *[[Specific Process Knowledge/Lithography/LiftOff#LiftOff(4",6")|Lift-off (4", 6")]] | ||
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*[[Specific Process Knowledge/Lithography/3DLithography#2-Photon Polymerization|2-Photon Polymerization]] | *[[Specific Process Knowledge/Lithography/3DLithography#2-Photon Polymerization|2-Photon Polymerization]] | ||
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= Manuals = | = Manuals = | ||
*[[Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual|User Manual for JEOL JBX-9500 E-beam Writer]] | *[[Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual|User Manual for JEOL JBX-9500 E-beam Writer]] | ||
Revision as of 10:31, 28 January 2016

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Direct writing via electron beam | Pattern transfer via hot embossing(HE) | Direct writing via IR laser |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet or coating |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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