Specific Process Knowledge/Etch/DryEtchProcessing: Difference between revisions

From LabAdviser
Jmli (talk | contribs)
Bghe (talk | contribs)
No edit summary
Line 14: Line 14:
| style="background:#DCDCDC;"| Comparison of the different hardware setups
| style="background:#DCDCDC;"| Comparison of the different hardware setups
|-
|-
| style="background: LightGray"| [[/Bonding| Temporary bonding]]
| style="background: LightGray"| [[/Bonding| Using carrier wafer]]
| style="background: #DCDCDC"| Processing different sizes of substrates by bonding to carriers
| style="background: #DCDCDC"| Processing different sizes of substrates by using a carriers: bonding or not bonding
|-
|-
| style="background: LightGray"| [[/OES| Optical Endpoint System]]
| style="background: LightGray"| [[/OES| Optical Endpoint System]]

Revision as of 14:38, 22 January 2016

Feedback to this page: click here

Techniques, hardware and challenges common to all dry etch tools

This page contains information that is common to dry etch instruments.


Dry etch page Description
Hardware comparison Comparison of the different hardware setups
Using carrier wafer Processing different sizes of substrates by using a carriers: bonding or not bonding
Optical Endpoint System Using the OES technique to find endpoints and to diagnose plasmas