Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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===Definition of structures=== | ===Definition of structures=== | ||
Due to the almost inert (111)-planes it is possible by KOH etching to realize high aspect ratio structures in sigle crytalline silicon using the (111)-planes as sidewalls. In Si(100) these sidewalls are inclined | Due to the almost inert (111)-planes it is possible by KOH etching to realize high aspect ratio structures in sigle crytalline silicon using the (111)-planes as sidewalls. In Si(100) these sidewalls are inclined - 54.7<sup>o</sup> with respect to the (100) surface - whereas in Si(110) the sidewalls are vertical (see figures below). | ||
[[Image:KOH_Anisotropy.jpg]] | [[Image:KOH_Anisotropy.jpg]] | ||