Specific Process Knowledge/Pattern Design: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
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= Pattern Design and Mask Fabrication =
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pattern_Design_and_Mask_Fabrication click here]'''
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== Pattern Design ==
There are many ways to do the layout of the patterns for your lithography process of your device.
Some common used software tools are:
* CleWin
* L-Edit
* Autocad
At Danchip we offer all users '''free access to CleWin 5''' for their mask layout. We have at least 50 floating licenses for concurrent usage.
There are two ways to use the software:
* [[/CleWin#CleWin 5 - without installation|'''Without installation.''']] You log on to a terminal server where the software is already installed and you use it right away. [[/CleWin#CleWin 5 - without installation|Click here for guidelines.]]
* [[/CleWin#CleWin 5 - local installation|'''With installation''' ]] of the CleWin 5 software on your local computer and obtaining a license from the DTU license server. [[/CleWin#CleWin 5 - local installation|Click here for guidelines.]]
Find the official [[Media:CleWin5UserGuide.pdf‎ |CleWin 5 User Guide here.]] The last document can also be found in the CleWin 5 installation directory (C:\Program Files (x86)\CleWin5) if you have made a local installation.
If you have a Mac or Linux computer look [[/CleWin#Working with a Mac or Linux computer |here]].
=== Tips and tricks for mask designing ===
You can find a
* [[Media:Beginner_guide_to_mask_design_using_Clewin_v1.1.pdf‎|"Beginners guide to mask design"  here]] and
* [[Media:Guide to mask making.pdf | Guide to mask making.pdf]]. Unfortunately this is quite old, but may be useful anyway. Note some links/e-mails etc. are not correct anymore
===Alignment marks===
The following alignment marks are suggested to use on the EVG620 automatic aligner for good pattern recognition. Pleased be adviced that they can be removed in KOH etching.
*[[Media:Alignmentkeys2.cif|Alignment marks 2 .cif]] - ''You need the program "Clewin" to open this file''
*[[Media:Alignmentkeys2.tdb|Alignment marks 2 .tdb]] - ''You need the program "L-Edit" to open this file''
====Alignment marks location====
For the [[Specific Process Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]] and [[Specific Process Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
*The mask's alignment marks for 4inch process:
**For Back Side Alignment (BSA) alignment marks must be located  between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and  exactly at 45mm in left and right in horizontal location (x=+-45mm).
**For Top Side Alignment (TSA) alignment marks must be located 35-45 mm in left and right in horizontal location and between -2 and +2 mm in vertical location.
*The mask's alignment marks for 6inch process:
**Both BSA and TSA must be located  between -2,5 and +2,5 mm in vertical location from mask center and 60 mm in left and right in horizontal location.
**Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm.
===Mask drawing with Matlab and AutoCAD===
To come soon
== Mask Fabrication ==
=== How to order a mask===
Our standard mask supplier is [http://deltamask.nl/ Delta Mask].
The smallest feature size obtainable from Delta Mask is 1.5 µm. If you need structures smaller than this please write it specificly in the e-mail. Be aware that this will increase the price by at least a factor of 3.
Send your *.cif file or *.gds file (for 7" mask or masks with CD under 1.5µm only *.gds should be used) in an e-mail along with a text file describing your specs ([[mask_spec|example spec file]]).
If you are using L-edit to design your mask you should remember to mark the top cell as the fabrication cell (a small red <b style="color:red">''f''</b> should show to the left of the cell name in the Design Navigator.
E-mail address can be found in [[Danchip_contact_information]].
Cost is available upon request. Write to [mailto:danchipsupport@danchip.dtu.dk danchipsupport@danchip.dtu.dk]
== Mask sets made by Danchip ==
=== Danchip quality control masks ===
This section contains a description of some of the quality control designs.
'''ASE standisation designs:'''
The quality control procedure on the ASE is using the daqmask 2 mask
* [[file:Daqmask2.pdf | A description of the daqmask 2 mask]]
* [[file:Daqmask2-a.tdb | The L-Edit design file]]
'''RIE standisation design:'''
The quality control procedures on RIE2 is using the dASEfeRIE mask
* [[file:daseferie.pdf | A description of the dASEfeRIE mask]]
* [[file:dASEfeRIE.tdb | The L-Edit design file]]
=== Masks for process development ===
*[[../UVExposure/travka|Travka mask set (7 masks)]]
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Revision as of 13:58, 13 January 2016

Feedback to this page: click here


THIS PAGE IS UNDER CONSTRUCTION

Pattern Design and Mask Fabrication

Feedback to this page: click here

Pattern Design

There are many ways to do the layout of the patterns for your lithography process of your device. Some common used software tools are:

  • CleWin
  • L-Edit
  • Autocad

At Danchip we offer all users free access to CleWin 5 for their mask layout. We have at least 50 floating licenses for concurrent usage.

There are two ways to use the software:

Find the official CleWin 5 User Guide here. The last document can also be found in the CleWin 5 installation directory (C:\Program Files (x86)\CleWin5) if you have made a local installation.

If you have a Mac or Linux computer look here.

Tips and tricks for mask designing

You can find a

Alignment marks

The following alignment marks are suggested to use on the EVG620 automatic aligner for good pattern recognition. Pleased be adviced that they can be removed in KOH etching.

Alignment marks location

For the KS Aligner and Aligner-6inch

  • The mask's alignment marks for 4inch process:
    • For Back Side Alignment (BSA) alignment marks must be located between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and exactly at 45mm in left and right in horizontal location (x=+-45mm).
    • For Top Side Alignment (TSA) alignment marks must be located 35-45 mm in left and right in horizontal location and between -2 and +2 mm in vertical location.
  • The mask's alignment marks for 6inch process:
    • Both BSA and TSA must be located between -2,5 and +2,5 mm in vertical location from mask center and 60 mm in left and right in horizontal location.
    • Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm.

Mask drawing with Matlab and AutoCAD

To come soon

Mask Fabrication

How to order a mask

Our standard mask supplier is Delta Mask. The smallest feature size obtainable from Delta Mask is 1.5 µm. If you need structures smaller than this please write it specificly in the e-mail. Be aware that this will increase the price by at least a factor of 3.

Send your *.cif file or *.gds file (for 7" mask or masks with CD under 1.5µm only *.gds should be used) in an e-mail along with a text file describing your specs (example spec file).

If you are using L-edit to design your mask you should remember to mark the top cell as the fabrication cell (a small red f should show to the left of the cell name in the Design Navigator.

E-mail address can be found in Danchip_contact_information.

Cost is available upon request. Write to danchipsupport@danchip.dtu.dk

Mask sets made by Danchip

Danchip quality control masks

This section contains a description of some of the quality control designs.

ASE standisation designs: The quality control procedure on the ASE is using the daqmask 2 mask


RIE standisation design: The quality control procedures on RIE2 is using the dASEfeRIE mask

Masks for process development