Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
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====Experimental setup==== | ====Experimental setup==== | ||
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3 phosphorous doped device wafers (n-type) were used. In the furnace 3 RCA-cleaned wafers were placed in the center of the boat with Boron source wafers (also RCA cleaned) with the front side facing the source wafers.A pre-deposition process was made for one hour at 1125 °C, then the source wafers were removed and the device wafers oxidized in a wet oxidation process at 950 °C for half | 3 phosphorous doped device wafers (n-type) were used. In the furnace 3 RCA-cleaned wafers were placed in the center of the boat with Boron source wafers (also RCA cleaned) with the front side facing the source wafers. A pre-deposition process was made for one hour at 1125 °C, then the source wafers were removed and the device wafers oxidized in a wet oxidation process at 950 °C for half an hour. Finally the oxide was removed in BHF and one wafer was cut into small samples for SIMS measurements. | ||
The experiment has been performed at 3 different pre-deposition times 30 min, 60 min and 90 min with and without a 30 min WET950 oxidation step. The results are resumed in the | The experiment has been performed at 3 different pre-deposition times 30 min, 60 min and 90 min with and without a 30 min WET950 oxidation step. The results are resumed in the figures below. | ||
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